IndiumV3, Main, Repository, bibRecord, 002570

Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study

Identifieur interne : 002570 ( Main/Repository ); précédent : 002569; suivant : 002571

Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study

Auteurs : RBID : Pascal:11-0472717

Descripteurs français

Pascal (Inist)
- Germe cristallin, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Nanofil, Nanomatériau, Mécanisme croissance, Nucléation, Synthèse nanomatériau, Cristallite, Indium, Couche mince, Nanostructure, Epitaxie phase vapeur, Oxyde de silicium, Méthode MOVPE, InAs, Substrat silicium, Substrat SiO2, SiO2, In, 8107V, 8107, 8110A, 6460Q.

English descriptors

KwdEn :
- Crystal seeds, Crystallites, Growth mechanism, III-V compound, III-V semiconductors, Indium, Indium arsenides, MOVPE method, Nanomaterial synthesis, Nanostructured materials, Nanostructures, Nanowires, Nucleation, Silicon oxides, Thin films, VPE.

Abstract

In this work, the nucleation and growth of InAs nanowires on patterned SiO₂/Si(111) substrates is studied. It is found that the nanowire yield is strongly dependent on the size of the etched holes in the SiO₂, where openings smaller than 180 nm lead to a substantial decrease in nucleation yield, while openings larger than ≃ 500 nm promote nucleation of crystallites rather than nanowires. We propose that this is a result of indium particle formation prior to nanowire growth, where the size of the indium particles, under constant growth parameters, is strongly influenced by the size of the openings in the SiO₂ film. Nanowires overgrowing the etched holes, eventually leading to a merging of neighboring nanowires, shed light into the growth mechanism.

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Pascal:11-0472717

Le document en format XML

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<term>Growth mechanism</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium</term>
<term>Indium arsenides</term>
<term>MOVPE method</term>
<term>Nanomaterial synthesis</term>
<term>Nanostructured materials</term>
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<term>Thin films</term>
<term>VPE</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Germe cristallin</term>
<term>Arséniure d'indium</term>
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<term>Nanomatériau</term>
<term>Mécanisme croissance</term>
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<term>Synthèse nanomatériau</term>
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<term>Indium</term>
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<term>Substrat silicium</term>
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<front><div type="abstract" xml:lang="en">In this work, the nucleation and growth of InAs nanowires on patterned SiO<sub>2</sub>
/Si(111) substrates is studied. It is found that the nanowire yield is strongly dependent on the size of the etched holes in the SiO<sub>2</sub>
, where openings smaller than 180 nm lead to a substantial decrease in nucleation yield, while openings larger than ≃ 500 nm promote nucleation of crystallites rather than nanowires. We propose that this is a result of indium particle formation prior to nanowire growth, where the size of the indium particles, under constant growth parameters, is strongly influenced by the size of the openings in the SiO<sub>2</sub>
 film. Nanowires overgrowing the etched holes, eventually leading to a merging of neighboring nanowires, shed light into the growth mechanism.</div>
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Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study

Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study

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